Computer simulation of germanium nanowire field effect transistors

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 227-230

  Li, Yiming ^a   Chou, Hung Mu ^a   Lee, Bo Shian ^a,b   Lu, Chien Sung ^a   Yu, Shao Ming ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC PROPERTIES; GATES (TRANSISTOR); LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; NUMERICAL METHODS; SEMICONDUCTING GERMANIUM; THRESHOLD VOLTAGE;

DENSITY-GRADIENT SIMULATION; NANODEVICES; NANOELECTRONICS; TRANSPORT CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 33845864970     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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