Resonant tunneling heterostructure devices - Dependencies on thickness and number of quantum wells

Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

Volumn 3045, Issue , 2004, Pages 817-826

  Radulovic, Nenad ^a   Willatzen, Morten ^a   Melnik, Roderick V N ^a  

^a UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; RESONANT TUNNELING;

COUPLED SYSTEMS; DECOUPLING ALGORITHMS; DOUBLE BARRIERS; NUMERICAL RESULTS; QUANTUM DRIFT-DIFFUSION MODELS; QUANTUM WELL LAYERS; RESONANT TUNNELING HETEROSTRUCTURE; SPATIAL DEPENDENCIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33749501247     PISSN: 03029743     EISSN: 16113349     Source Type: Book Series    
DOI: 10.1007/978-3-540-24767-8_86     Document Type: Article

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