Interface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu(In,Ga)Se2 thin films on GaAs

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Lei, C H ^a   Rockett, A A ^a   Robertson, I M ^a   Papathanasiou, N ^b   Siebentritt, S ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

DISPERSIVE SPECTROSCOPY; EPITAXIAL FILMS; KIRKENDALL VOIDS; SECOND PHASE PARTICLES;

THIN FILMS;

EID: 33845747291     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2397282     Document Type: Article

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