Spin interference in silicon one-dimensional rings

Journal of Physics Condensed Matter

Volumn 18, Issue 45, 2006, Pages

  Bagraev, N T ^a   Galkin, N G ^a   Gehlhoff, W ^b   Klyachkin, L E ^a   Malyarenko, A M ^a   Shelykh, I A ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOLE MOBILITY; QUANTUM THEORY; SELF ASSEMBLY; SILICON;

BIAS VOLTAGE; PHASE SENSITIVITY; SPIN INTERFERENCE; SPIN TRANSISTOR EFFECT;

WAVE INTERFERENCE;

EID: 33845728829     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/45/L01     Document Type: Article

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