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Volumn 177, Issue 39-40, 2007, Pages 3529-3536

In situ synthesis of Si3N4 in the Na2SiF6-N2 system via CVD: Kinetics and mechanism of solid-precursor decomposition

Author keywords

CVD Si3N4; Kinetics; Reaction mechanisms; Silicon precursor; Sodium silicofluoride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; NUMERICAL METHODS; REACTION KINETICS; SYNTHESIS (CHEMICAL);

EID: 33845668400     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2006.09.016     Document Type: Article
Times cited : (21)

References (14)
  • 4
    • 33845668045 scopus 로고    scopus 로고
    • 6), Bs. thesis, Yucatan State University, Mexico, 1988.
  • 7
    • 33845604129 scopus 로고    scopus 로고
    • 6 as a Solid Precursor: Microstructural Evolution. XIV International Materials Research Congress, held in Cancun México, August 21-25, 2005.
  • 8
    • 0004284217 scopus 로고
    • Society of Manufacturing Engineers, Dearborn Michigan
    • Roy R. A Primer on the Taguchi Method (1990), Society of Manufacturing Engineers, Dearborn Michigan 100
    • (1990) A Primer on the Taguchi Method , pp. 100
    • Roy, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.