Thermal simulation studies of a high-power light-emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6355, Issue , 2006, Pages

  Fan, B F ^a   Zhao, Y ^a   Xian, Y L ^a   Wang, G ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

Attachment defects; High power light emitting diodes; Thermal gradients; Thermal simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRONICS PACKAGING; FLIP CHIP DEVICES; THERMAL GRADIENTS;

ATTACHMENT DEFECTS; CHIP ATTACHMENT; HIGH POWER LIGHT EMITTING DIODES; THERMAL SIMULATION;

LIGHT EMITTING DIODES;

EID: 33845659573     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.691605     Document Type: Conference Paper

References (5)

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3. M. Arik, et al, "Effect of chip and bonding defects on the junction temperatures of high-brightness light-emitting diodes", Optical Engineering, 44(11), 111305, 2005.
4. ANSYS8.0, Ansys8.0 Manual, www.ansys.com (2004).
5. Cree, Inc., www.cree.com (2005).