A 20 dBm linear RF power amplifier using stacked silicon-on-sapphire MOSFETs

IEEE Microwave and Wireless Components Letters

Volumn 16, Issue 12, 2006, Pages 684-686

  Jinho, Jeong ^a,b   Pornpromlikit, Sataporn ^b   Asbeck, Peter M ^a,b   Kelly, Dylan ^c  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Peregrine Semiconductor   (United States)

Author keywords

Metal oxide semiconductor field effect transistor (MOSFET); Power amplifier (PA); Silicon on sapphire (SOS); Stacked transistors

Indexed keywords

OUTPUT POWER; POWER ADDED EFFICIENCY (PAE); SILICON ON SAPPHIRE (SOS); STACKED TRANSISTORS;

GAIN MEASUREMENT; MOSFET DEVICES; SAPPHIRE; SILICON;

POWER AMPLIFIERS;

EID: 33845541212     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.885634     Document Type: Article

References (7)

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