Band gap energy determination by photoacoustic spectroscopy under continuous light excitation

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Astrath, N G C ^a   Sato, F ^a   Pedrochi, F ^a   Medina, A N ^a   Bento, A C ^a   Baesso, M L ^a   Persson, C ^b   Ferreira Da Silva, A ^c  

^a STATE UNIVERSITY OF MARINGÁ   (Brazil)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c FEDERAL UNIVERSITY OF BAHIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; OPTICAL PROPERTIES; PHOTOACOUSTIC SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

NONRADIATIVE RELAXATION PROCESSES; OPTICAL ABSORPTION SPECTRA; OPTICAL BAND GAP;

ENERGY GAP;

EID: 33845449181     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402239     Document Type: Article

References (26)

1. L. Eaves, H. Vargas, and P. J. Williams, Appl. Phys. Lett. 38, 768 (1981).
2. A. Mandelis, Photoacoustic and Thermal Wave Phenomena in Semiconductors (North-Holland, New York, 1987), Vol. 1, p. 397.
3. O. Zelaya-Angel, J. J. Alvarado-Gil, R. Lozada-Morales, H. Vargas, and A. Ferreira da Silva, Appl. Phys. Lett. 64, 291 (1994).
4. T. Kawahara, Y. Ohbuchi, J. Morimoto, H. Goto, and T. Ido, Mater. Lett. 50, 347 (2001).
5. H. Vargas and L. C. M. Miranda, Phys. Rep. 161, 43 (1988).
6. A. Pinto Neto, H. Vargas, N. F. Leite, and L. C. M. Miranda, Phys. Rev. B 41, 9971 (1990).
7. H. Yamamoto, I. Suemune, and M. Yamanishi, J. Appl. Phys. 60, 2621 (1986).
8. L. P. Avakyants, P. Y. Bokov, T. P. Kolmakova, and A. V. Chervyakov, Semiconductors 38, 1384 (2004).
9. A. E. Sotnikov, M. A. Chernikov, and O. A. Ryabushkin, Instrum. Exp. Tech. 47, 656 (2004).
10. K. F. Berggren and B. E. Sernelius, Phys. Rev. B 24, 1971 (1981).
11. W. P. Dumke, Appl. Phys. Lett. 42, 196 (1983).
12. K. E. Newman, A. Lastras-Martinez, B. Kramer, S. A. Barnett, M. A. Ray, J. D. Dow, J. E. Greene, and P. M. Raccach, Phys. Rev. Lett. 50, 1466 (1983).
13. A. Nayak, G. L. Bhalla, and G. C. Trigunayat, Mater. Res. Bull. 35, 2263 (2000).
14. D. L. Wood and J. Tauc, Phys. Rev. B 5, 3144 (1972).
15. L. R. de Freitas, E. C. da Silva, A. M. Mansanares, G. Tessier, and D. Fournier, J. Appl. Phys. 98, 063508 (2005).
16. R. C. Mesquita, A. M. Mansanares, E. C. da Silva, P. R. Barja, L. C. M. Miranda, and H. Vargas, Instrum. Sci. Technol. 34, 33 (2006).
17. T. S. Silva, A. S. Alves, I. Pepe, H. Tsuzuki, O. Nakamura, M. M. F. d'Aguiar Neto, A. Ferreira da Silva, N. Veissid, and C. Y. An, J. Appl. Phys. 83, 6193 (1998).
18. A. Ferreira da Silva, N. Veissid, C. Y. An, I. Pepe, N. Barros de Oliveira, and A. V. Batista da Silva, Appl. Phys. Lett. 69, 1930 (1996).
19. Q. Wahab, A. Ellison, A. Henry, E. Janźn, C. Hallin, J. Di Persio, and R. Martinez, Appl. Phys. Lett. 76, 2725 (2000).
20. R. Ahuja, H. Arwin, A. Ferreira da Silva, C. Persson, J. M. Osorio-Guilĺn, J. Souza de Almeida, C. Moyses Araújo, E. Veje, N. Veissid, C. Y. Na, I. Pepe, and B. Johansson, J. Appl. Phys. 92, 7219 (2002).
21. I. Ch. Schlüter and M. Schlüter, Phys. Rev. B 9, 1652 (1974).
22. C. Persson and A. Ferreira da Silva, in Optoelectronic Devices: III-Nitrides, edited by, M. Razeghi, and, M. Henini, (Elsevier, Oxford, 2004), Vol. 1, p. 479.
23. D. P. Almond and P. M. Patel, Photothermal Science and Techniques (Chapman and Hall, London, 1996), Vol. 10, pp. 130-133.
24. R. H. Bube, Electronic Properties of Crystalline Solids (Academic, New York, 1974), Vol. 1, pp. 438-439.
25. C. Persson and U. Lindefelt, J. Appl. Phys. 86, 5036 (1999).
26. N. Achtziger and W. Witthuhn, Appl. Phys. Lett. 71, 110 (1997).