The effect of hydrogen peroxide in a citric acid based copper slurry on Cu polishing

Journal of the Electrochemical Society

Volumn 154, Issue 1, 2007, Pages

  Eom, Dae Hong ^a,c   Kim, In Kwon ^a   Han, Ja Hyung ^a   Park, Jin Goo ^a,b  

^a Hanyang University   (South Korea)

^b Elctrochemical Society   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBOXYLIC ACIDS; CHEMICAL MECHANICAL POLISHING; DISSOLUTION; ETCHING; HYDROGEN PEROXIDE; PASSIVATION; SLURRIES;

DYNAMIC ETCHING RATES; MECHANICAL REACTION; PASSIVATION LAYERS; REMOVAL RATE;

COPPER;

EID: 33845250189     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2393015     Document Type: Article

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