Distortion of chucked extreme ultraviolet reticles from entrapped particles

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2829-2833

  Ramaswamy, V ^a   Engelstad, R L ^a   Turner, K T ^a   Mikkelson, A R ^a   Veeraraghavan, S ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENTRAPPED PARTICLES; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); IMAGE PLACEMENT (IP) ERRORS; ULTRAVIOLET RETICLES;

ELECTRIC DISTORTION; ELECTROSTATICS; ERROR ANALYSIS; FINITE ELEMENT METHOD; IMAGING SYSTEMS; LITHOGRAPHY; PROBLEM SOLVING;

ULTRAVIOLET DETECTORS;

EID: 33845249291     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2375078     Document Type: Article

References (5)

1. SEMI P37-1102, SEMI Standard Specification for Extreme Ultraviolet Lithography Substrates.
2. SEMI P40-1103, SEMI Standard Specification for Mounting Requirements and Alignment Reference Locations for Extreme Ultraviolet Lithography Masks.
3. M. Nataraju, J. Sohn, A. Mikkelson, K. Turner, R. Engelstad, and C. Van Peski, Proc. SPIE 6151, 61510C (2006).
4. R. Tejeda, R. Engelstad, E. Lovell, and K. Blaedel, J. Vac. Sci. Technol. B 20, 2840 (2002).
5. R. Tejeda, R. Engelstad, E. Lovell, A. Anderson, D. Yang, and K. Blaedel, Mater. Res. Soc. Symp. Proc. 738, 413-418 (2003).