Threshold voltage control in polysilicon or fully-silicided-Hf-based gate dielectric pmosfets using controlled lateral oxidation

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 305-310

  Kaushik, V ^a   Hyun, S ^b   Rohr, E ^a   De Gendt, S ^a   Van Elshocht, S ^a   Delabie, A ^a   Everaert, J L ^a   Veloso, A ^a   Brus, S ^a   Ragnarsson, L ^a   Richard, O ^a   Caymax, M ^a   Heyns, M ^a  

^a IMEC   (Belgium)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; MOSFET DEVICES; OXIDATION; PERMITTIVITY; SILICA; THRESHOLD VOLTAGE;

CONTROLLED LATERAL OXIDATION (CLO); POLY-DEPLETION GAIN; POLYSILICON GATES;

POLYSILICON;

EID: 33845240365     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209279     Document Type: Conference Paper

References (5)

1. V.Kaushik, S.DeGendt, M.Caymax et al., Proceedings of the Electrochemical Society (ECS) Meeting, Paris, April 2003.
2. C. Hobbs, L. Fonseca, V. Dhandapani et al., VLSI Symposium 2003 Proceedings paper 2-1 pp 9.
3. W. DeWeerd, V.Kaushik, J.Chen et al., Microelectronics Reliability, 45, pp786 (2005).
4. A. Veloso et al., IEEE International Electron Devices Meeting (IEDM) Technical Digest p855 (2004).
5. H. Takeuchi et al., IEEE IEDM Technical Digest, p829 (2004).