Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 557-561

  Pauc, N ^a   Phillips, M R ^a   Aimez, V ^a   Drouin, D ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

Diffusion length; GaN; Low voltage cathodoluminescence; Threading dislocation

Indexed keywords

CATHODOLUMINESCENCE; DIFFUSION; DISLOCATIONS (CRYSTALS); EXCITONS; MICROSCOPIC EXAMINATION;

DIFFUSION LENGTH; ELECTRONS ACCELERATING VOLTAGE; THREADING DISLOCATION;

GALLIUM NITRIDE;

EID: 33845232866     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.024     Document Type: Article

References (7)

1. Jain S.C., Willander M., Narayan J., and Van Overstraeten R. J. Appl. Phys. 87 (2000) 965
2. For the simulations of the primary electrons path in the matter, we used the Casino software: http://www.gel.usherb.ca/casino
3. Yakimov E.B. J. Phys.: Condens. Matter 14 (2002) 13069
4. Berz F., and Kuiken H.K. Sol. State Elec. 19 (1976) 437
5. Davidson S.M. J. Microsc. 110 (1977) 177
6. Rosner S.J., Carr E.C., Ludowise M.J., Girolami G., and Erikson H.I. Appl. Phys. Lett. 70 (1996) 420
7. Ettenberg M. J. Appl. Phys. 45 (1974) 901