Device correlation: Modeling using uncorrelated parameters, characterization using ratios and differences

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Volumn 3, Issue , 2006, Pages 698-702

  McAndrew, Colin C ^a   Drennan, Patrick G ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

MOSFET modeling; SPICE modeling; Statistical modeling

Indexed keywords

CORRELATED PARAMETERS; MOSFET MODELING; SPICE MODELING; STATISTICAL MODELING;

CHANNEL CAPACITY; COMPUTER SIMULATION; ERROR ANALYSIS; MATHEMATICAL MODELS; MOSFET DEVICES; STATISTICAL METHODS;

CORRELATION THEORY;

EID: 33845195066     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. R. L. Iman and M. J. Shortencarrier, "A FORTRAN77 Program for the Gerneration of Latin Hypercube and Random Samples for Use with Computer Models," Sandia National Laboratories, NUREG/CR-3624 SAND83-2365 RG,Mar. 1984.
2. F. Severson and S. Simpkins, "Hadamard Analysis-An Effective, Systematic Tool for Worst-Case Circuit Analysis," Proc. IEEE CICC, pp. 114-118, 1987.
3. R. A. Ashton, "Gate Oxide Thickness Measurement using Fowler-Nordheim Tunneling," Proc. IEEE ICMTS, pp. 57-60, Mar. 1991.
4. C. C. McAndrew and P. G. Drennan, "Unified Statistical Modeling for Circuit Simulation," Proc. MSM-WCM, pp. 715-718, Apr. 2002.