Carrier lifetime studies in Ge using microwave and infrared light techniques

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 781-787

  Gaubas, E ^a   Bauza M ^a   Uleckas, A ^a   Vanhellemont, J ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

Carrier lifetime; Ge; Surface recombination

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH FROM MELT; LIGHT TRAILERS; NEODYMIUM LASERS; SURFACE PHENOMENA;

CARRIER LIFETIME; CARRIER RECOMBINATION; IR PARAMETRIC OSCILLATOR (IRPO); MICROWAVE REFLECTION;

GERMANIUM;

EID: 33845187891     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.023     Document Type: Article

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