Novel dielectric capping layer approach for advanced copper interconnects using chemical grafting

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2088-2093

  Bispo, I ^a   Couturier, B ^a   Haumesser, P H ^b   Mangiagalli, P ^a   Monchoix, H ^a   Passemard, G ^d   Peyne, C ^a   Roy, S ^a,c   Thieriet, N ^a   Rabinzohn, P ^a   Bureau, C ^a  

^a Alchimer   (France)

^b CEA LETI   (France)

^c PSL RESEARCH UNIVERSITY   (France)

^d STMICROELECTRONICS   (France)

Author keywords

Adhesion; Capping; Chemical grafting; Electromigration

Indexed keywords

ADHESION; CHEMICAL BONDS; ELECTROMIGRATION; GRAFTING (CHEMICAL); OPTICAL INTERCONNECTS; THIN FILMS;

ADHESION ENERGY; CAPPING; COPPER INTERCONNECTS;

DIELECTRIC MATERIALS;

EID: 33751342659     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.09.033     Document Type: Article

References (4)

1. International Technology Roadmap for Semiconductors. .
2. Lane M., et al. J. Appl. Phys. 93 (2003) 1417
3. Hu C.-K., et al. Appl. Phys. Lett. 84 (2004) 4986
4. Dauskart R.H., et al. Eng. Fract. Mech. 61 (1998) 141-162