Atomic vapor deposition of Ru and RuO2 thin film layers for electrode applications

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 242-247

  Manke, C ^a   Miedl, S ^a   Boissiere, O ^a   Baumann, P K ^a   Lindner, J ^a   Schumacher, M ^a   Brodyanski, A ^b   Scheib, M ^b  

^a AIXTRON AG   (Germany)

^b Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

Advanced electrode; Atomic vapor deposition; AVD; Metal gates; Ruthenium; Ruthenium oxide

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; THIN FILMS;

ADVANCED ELECTRODES; ATOMIC VAPOR DEPOSITION; AVD; METAL GATES;

VAPOR DEPOSITION;

EID: 28044443879     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.030     Document Type: Conference Paper

References (7)

1. S. Hara, T. Teraji, H. Okushi, and K. Kajimura Appl. Surf. Sci. 117/118 1997 394
2. M. Ťapajna, P. PIÍsečný, R. Lupták, K. Hušeková, K. Fröhlich, L. Harmatha, J.C. Hooker, F. Roozeboom, and M. Jergel Mater. Sci. Semicond. Proc. 7 2004 271 276
3. Pan, and S.B. Desu Phys. Status Solidi 161 1997 201
4. J.J. Joo, J.M. Seon, Y.C. Jeon, K.Y. Oh, J.S. Roh, J.J. Kim, and J.T. Choi J. Appl. Phys. 37 1998 3396
5. M.L. Green, M.E. Gross, L.E. Papa, K.J. Schnoes, and D. Brasen J. Electrochem. Soc. 132 1985 2677
6. M. Schumacher, and J. Linder Eur. Semicond. 2002 23
7. U. Weber, O. Boissière, J. Lindner, M. Schumacher, P. Lehnen, C. Manke, S. van Elshocht, M. Caymax, V. Cosnier, T. McEntee, These Proceedings.