Dielectric properties of lanthanum-doped bismuth layer-structured ferroelectrics

Integrated Ferroelectrics

Volumn 65, Issue , 2004, Pages 135-140

  Hui, Rong ^a   Zhu, Jun ^a   Lu, Wang Ping ^a   Chen, Xiao Bing ^a  

^a YANGZHOU UNIVERSITY   (China)

Author keywords

Bismuth layer structured ferroelectrics; La doping; Relaxor

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC PROPERTIES; RARE EARTH COMPOUNDS; STRAIN; TITANIUM COMPOUNDS;

BISMUTH LAYER-STRUCTURED FERROELECTRICS; LA DOPING; RELAXOR;

FERROELECTRIC MATERIALS;

EID: 33751159849     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490892926     Document Type: Article

References (15)

1. H. Watanabe, T. Mihara, H. Yoshimori, and C. A. P. D. Araujo, Jpn. J. Appl. Phys. 34, 5240 (1995).
2. H. Irie, M. Miyayama, and T. Kudo, J. Appl. Phys. 90, 4089 (2001).
3. G. A. Smolenskii, J. Phys. Soc. Jpn. 28, 26 (1970).
4. V. Westphal, W. Kleemann, and M. D. Glinchuk, Phys. Rev. Lett. 68, 847 (1992).
5. J. Toulouse, B. E. Vugmeister, and R. Pattnaik, Phys. Rev. Lett. 73, 3467 (1994).
6. R. Sommer, N. K. Yushin, and J. J. Vander Klink, Phys. Rev. B 48, 13230 (1993).
7. X. Dai, A. Digiovanni, and D. Viehland, J. Appl. Phys. 74, 3399 (1993).
8. Z. Ujma, M. Adamczyk, and J. Handerek, J. Eur. Ceram. Soc. 18, 2201 (1998).
9. M. Osada, M. Tada, M. Kakihana, T. Watanabe, and H. Funakubo, J. Jpn. Appl. Phys. 40, 5572 (2001).
10. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature 40, 682 (1999).
11. C. A-Pazde Araujo, J. D. Cuchiaro, L. D. Mcmilian, M. C. Scott, and J. F. Scott, Nature 374, 627 (1995).
12. G. V. Lewis, C. R. A. Catlow, and R. E. W. Casselton, J. Am. Ceram. Soc. 68, 555 (1985).
13. P. C. Joshi and S. B. Krupanidhi, Appl. Phys. Lett. 62, 1928 (1993).
14. B. E. Vugmeister and M. D. Glinchuk, J. Modern Phys. 62, 993 (1990).
15. L. Zhou, P. M. Vilarinho, and J. L. Baptista, J. Eur. Ceram. Soc. 21, 531 (2001).