Polarization-insensitive quantum well optoelectronic devices using quantum well shape modification

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2918, Issue , 1997, Pages 184-192

  Koteles, Emil S ^a   He, Jian Jun ^a   Charbonneau, N Sylvain ^a   Poole, Philip J ^a   Aers, Geof C ^a   Feng, Yan ^a   Goldberg, Richard D ^b   Mitchell, Ian V ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

Optical amplifiers; Optoelectronic devices; Photodetectors; Photonic integrated circuits; Polarization insensitivity; Quantum confined Stark effect modulators; Quantum well intermixing; QW bandgap shifting

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROOPTICAL DEVICES; ENERGY GAP; INTEGRATED CIRCUITS; INTEGRATED OPTOELECTRONICS; LIGHT AMPLIFIERS; LIGHT MODULATORS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; POLARIZATION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SPECTRUM ANALYSIS; STARK EFFECT; THICKNESS MEASUREMENT;

OPTICAL AMPLIFIERS; PHOTONIC INTEGRATED CIRCUITS; POLARIZATION INSENSITIVITY; QUANTUM CONFINED STARK EFFECT MODULATORS; QUANTUM WELL INTERMIXING; QW BANDGAP SHIFTING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33751148190     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.265364     Document Type: Conference Paper

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