Effects of different cation and anion interdiffusion rates in disordered in0.53ga0.47as/inp single quantum wells

Japanese Journal of Applied Physics

Volumn 34, Issue 4R, 1995, Pages 1778-1783

  Shiu, Wai Chee ^a   Micallef, Joseph ^a,b   Ng, Isaac ^a,c   Li, E Herbert ^a,c  

^a HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

^b UNIVERSITY OF MALTA   (Malta)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Confinement profile; Disordering; InGaAs; Quantum well; Strain

Indexed keywords

ANION INTERDIFFUSION RATES; CATION INTERDIFFUSION RATES; CONFINEMENT PROFILE; ERROR FUNCTION DISTRIBUTION; GROUND STATE TRANSITION ENERGY; INDIUM GALLIUM ARSENIDE; SUBBAND EDGE STRUCTURE; SUBLATTICES;

COMPOSITION; CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; INTERDIFFUSION (SOLIDS); IONS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029288470     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.1778     Document Type: Article

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