Room temperature negative differential resistance in nanoscale molecular junctions

Materials Research Society Symposium - Proceedings

Volumn 582, Issue , 2000, Pages

  Chen, J ^a   Wang, W ^a   Reed, M A ^a   Rawlett, A M ^b   Price, D W ^b   Tour, J M ^b  

^a Yale University   (United States)

^b RICE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751121453     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (18)

1. L. Esaki, Phys. Rev. 109, 603 (1958).
2. L. L. Chang, L. Esaki, R. Tsu, Appl. Phys. Lett. 24, 593 (1974).
3. T. C. L. G. Sollner et al., Appl. Phys. Lett. 43, 588 (1983).
4. M. Tsuchiya, H. Sakaki, J. Yoshino, Jpn. J. Appl. Phys. 24, L466 (1985).
5. S. M. Sze (Eds), High-Speed Semiconductor Devices, (Wiley, New York, 1990).
6. C. Zhou et al., Appl. Phys. Lett. 71, 611 (1997).
7. J. Chen, M. A. Reed, A. M. Rawlett, J. M. Tour, Science 286, 1550 (1999).
8. M. Moroni et al., Macromolecules 1997, 30, 1964.
9. K. Sonogashira, Y. Tohda, and N. Hagihara, Tetraherdon Lett 4467 (1975).
10. D. L. Pearson and J. M. Tour, J. Org. Chem. 62, 1376 (1997).
11. J. M. Tour et al. J. Am. Chem. Soc. 117, 9529 (1995).
12. C. Zhou, thesis, Yale University (1999).
13. J. H. Smet, T. P. E. Broekaert, and C. G. Fonstad, J. Appl. Phys. 71, 2475 (1992)
14. J. R. Söderstr̈m, D. H. Chow, and T. C. McGill, J. Appl. Phys. 66, 5106 (1989)
15. J. Day et al., J. Appl. Phys. 73, 1542 (1993).
16. H. H. Tsai et al., IEEE Elec. Dec. Lett. 15, 357 (1993).
17. The case where Z = SH was avoided due to anomalies that could be caused through electrochemical disulfide formation and cleavage events.
18. M. R. Deshpande et al., Phys. Rev. Lett. 76, 1328 (1996).