Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100)

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Singh, M P ^a   Shalini, K ^a   Shivashankar, S A ^a   Deepak, G C ^a   Bhat, N ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; EUROPIUM COMPOUNDS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PERMITTIVITY; SILICON;

FILM MORPHOLOGY; NONSTOICHIOMETRY; STRUCTURAL PROPERTIES;

SEMICONDUCTING FILMS;

EID: 33751099036     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2388128     Document Type: Article

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