Critical thickness of heavily boron-doped silicon-germanium alloys

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Chopra, Saurabh ^a   Ozturk, Mehmet C ^a   Misra, Veena ^a   McGuire, Kris ^b   McNeil, L E ^b  

^a North Carolina State University   (United States)

^b UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; KINETIC CONSIDERATIONS; KINETIC MODEL;

CONCENTRATION (PROCESS); MATHEMATICAL MODELS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING;

SILICON ALLOYS;

EID: 33751072346     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2374870     Document Type: Article

References (8)

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