Generalized phase change memory scaling rule analysis

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 92-94

  Kim, Sangbum ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751059259     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629509     Document Type: Conference Paper

References (4)

1. The Technology Working Groups, "2005 International technology roadmap for semiconductors," http://public.itrs.net, 2005
2. S. Lai and Tyler Lowrey, "OUM - a 180 nm nonvolatile memory cell element technology for stand alone and embedded applications," IEDM Tech. Dig., 36.5, 2001
3. S. Lai, "Current status of the phase change memory and its future," IEDM Tech. Dig., 10.1, 2003
4. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, "Scaling analysis of phase-change memory technology," IEDM Tech. Dig., 29.6, 2003