Quasi-neutral limit of the drift diffusion models for semiconductors: The case of general sign-changing doping profile

SIAM Journal on Mathematical Analysis

Volumn 37, Issue 6, 2006, Pages 1854-1889

  Wang, Shu ^a   Xin, Zhouping ^b   Markowich, Peter A ^c  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF VIENNA   (Austria)

Author keywords

weighted Liapunov type functional; Classical energy methods; Drift diffusion equations; Multiple scaling asymptotic expansions; Quasi neutral limit; Singular perturbation

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; DOPING (ADDITIVES); MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

Λ-WEIGHTED LIAPUNOV TYPE FUNCTIONAL; CLASSICAL ENERGY METHODS; DRIFT DIFFUSION EQUATIONS; MULTIPLE SCALING ASYMPTOTIC EXPANSIONS; QUASI NEUTRAL LIMIT; SINGULAR PERTURBATION;

DIFFUSION;

EID: 33751012092     PISSN: 00361410     EISSN: None     Source Type: Journal    
DOI: 10.1137/S0036141004440010     Document Type: Article

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