Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors

Journal of Mathematical Analysis and Applications

Volumn 268, Issue 1, 2002, Pages 184-199

  Gasser, Ingenuin ^a   Hsiao, Ling ^b   Markowich, Peter A ^c   Wang, Shu ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c UNIVERSITY OF VIENNA   (Austria)

Author keywords

Entropy method; Nonlinear drift diffusion equations; Quasi neutral limit

Indexed keywords

EID: 0036538061     PISSN: 0022247X     EISSN: None     Source Type: Journal    
DOI: 10.1006/jmaa.2001.7813     Document Type: Article

References (14)

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3. Traveling waves analysis and jump relations for the Euler-Poisson model in the quasineutral limit
4. Quasineutral limit of Euler-Poisson system arising from plasma physics
5. On existence, uniqueness and asymptotic behaviour of solutions of the basic equations for carrier transport in semiconductors
6. The initial time layer problem and the quasineutral limit in a nonlinear drift-diffusion model for semiconductors
7. The initial time layer problem and the quasi-neutral limit in the semiconductor drift-diffusion model
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9. A hierarchy of hydrodynamic models for plasmas: Quasineutral limits in the drift-diffusion equations
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11. p(0, T; B)