Structural and textural changes of CVD-SiC to indentation, high temperature creep and irradiation

Journal of the European Ceramic Society

Volumn 27, Issue 2-3, 2007, Pages 1503-1511

  Chollon, G ^a   Vallerot, J M ^a   Helary, D ^a,b   Jouannigot, S ^a  

^a Laboratoire des Composites Thermostructuraux   (France)

^b DIF   (France)

Author keywords

Creep; Defects; Plasticity; Raman spectroscopy; SiC

Indexed keywords

DISLOCATION SLIP; INTERGRANULAR CREEP MECHANISM; PUNCTUAL DEFECTS;

ANNEALING; CHEMICAL VAPOR DEPOSITION; CREEP; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); INDENTATION; PROTON IRRADIATION; RAMAN SPECTROSCOPY; STACKING FAULTS; TEXTURES;

SILICON CARBIDE;

ANNEALING; CHEMICAL VAPOR DEPOSITION; CREEP; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); INDENTATION; PROTON IRRADIATION; RAMAN SPECTROSCOPY; SILICON CARBIDE; STACKING FAULTS; TEXTURES;

EID: 33750982091     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2006.05.038     Document Type: Article

References (16)

1. Ning X.J., and Pirouz P. The microstructure of SCS-6 SiC fiber. J. Mater. Res. 6 10 (1991) 2234-2248
2. Chollon G., and Naslain R. Chemical and thermo-mechanical properties of SiC-based reinforcements. Ceram. Eng. Sci. Proc. 21 4 (2000) 339-345
3. Ward Y., Young R.J., and Shatwell R.A. A Microstructural study of silicon carbide fibres through the use of Raman microscopy. J. Mater. Sci. 36 (2001) 55-66
4. Charollais, F., Fonquernie, S., Perrais, C., Perez, M., Cellier, F. and Vitali, M. P., CEA and AREVA R&D on V/HTR fuel fabrication with the CAPRI experimental manufacturing line. In Proceedings of the 2005 European Nuclear Conference (Versailles, France, December 11-14, 2005), CD-ROM, 2005.
5. Feldman D.W., Parker Jr. J.H., Choyke W.J., and Patrick L. Phonon dispersion curves by Raman scattering in SiC polytypes 3C, 4H, 6H, 15R and 21R. Phys. Rev. 173 3 (1968) 787-793
6. Nakashima S., Katahama H., Nakakura Y., and Mitsuishi A. Relative Raman intensities of the folded modes in SiC polytypes. Phys. Rev. B 33 8 (1986) 5721-5729
7. Cuesta A., Dahmelincourt P., Laureyns J., Martinez-Alonzo A., and Tarascon J.M.D. Raman microprobe study on carbon materials. Carbon 32 8 (1994) 1523-1532
8. Loudon R. The Raman effect of crystals. Adv. Phys. 13 (1964) 423-482
9. Arguello C.A., Rousseau D.L., and Porto S.P.S. First-order Raman effect in Wurtzite-type crystals. Phys. Rev. 181 3 (1969) 1351-1363
10. Chollon G., Vallerot J.M., Grente K., Shatwell R.A., and Couzi M. Local texture analyses of ceramic and carbon composites through Raman microspectroscopy mappings. In: Singh M., Kerans R.J., Lara-Cursio E., and Naslain R. (Eds). High Temperature Ceramic Matrix Composites, vol. 5 (2005), The American Ceramic Society, Westerville, Ohio 557-562
11. Di Carlo J.A. Creep of chemically vapour deposited SiC fibres. J. Mater. ScI. 21 (1986) 217-224
12. Lewinson C.A., Giannuzzi L.A., Bakis C.E., and Tressler R.E. High temperature creep and thermostructural evolution of chemically vapor-deposited silicon carbide. J. Am. Ceram. Soc. 82 2 (1999) 407-413
13. Page T.F., Riester L., and Hainsworth S.V. The plasticity response of 6H-SiC and related isostructural materials to nanoindentation: slip versus densification. Mat. Res. Soc. Symp. Proc. 522 (1998) 113-118
14. Yang J.W., and Pirouz P. The α → β polytypic transformation in high temperature indented SiC. J. Mater. Res. 8 11 (1993) 2902-2907
15. Richter H., Wang Z.P., and Ley L. The one phonon Raman spectrum in microcrystalline silicon. Solid. State Commun. 39 (1981) 625-629
16. Rohmfeld S., Hundhausen M., and Ley L. Raman scattering in polycrystalline 3C-SiC: influence of stacking faults. Phys. Rev. B 58 15 (1998) 9858-9862