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Volumn 16, Issue 4, 2006, Pages 863-867

Absorption and fluorescence spectra of gallium phosphide (GaP) nanoparticles

Author keywords

Absorption; Fluorescence; Gallium phosphide; Nanoparticles

Indexed keywords

FLUORESCENCE; GALLIUM COMPOUNDS; LIGHT ABSORPTION; LIGHT EMISSION; PARTICLES (PARTICULATE MATTER); PHOSPHORUS COMPOUNDS;

EID: 33750930349     PISSN: 10036326     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1003-6326(06)60341-5     Document Type: Article
Times cited : (9)

References (14)
  • 1
    • 0035535234 scopus 로고    scopus 로고
    • Synthsis and microstructure of galium phosphide nanowires
    • SHI W S, ZHENG Y F, WANG N, LEE C S, LEE S T. Synthsis and microstructure of galium phosphide nanowires[J]. J Vac Sci Technol B, 2001, 19(4): 1115-1118.
    • (2001) J Vac Sci Technol B , vol.19 , Issue.4 , pp. 1115-1118
    • Shi, W.S.1    Zheng, Y.F.2    Wang, N.3    Lee, C.S.4    Lee, S.T.5
  • 2
    • 0037145990 scopus 로고    scopus 로고
    • Sterically induced shape and crystalline phase control of GaP nanocrystals
    • KIM Y H, JUN Y W, JUN B H, LEE S M, CHEON J. Sterically induced shape and crystalline phase control of GaP nanocrystals[J]. J Am Chem Soc, 2002, 124(46): 13656-13657.
    • (2002) J Am Chem Soc , vol.124 , Issue.46 , pp. 13656-13657
    • Kim, Y.H.1    Jun, Y.W.2    Jun, B.H.3    Lee, S.M.4    Cheon, J.5
  • 3
    • 2942706240 scopus 로고    scopus 로고
    • ESR defection of Ga self-interstitial defects in GaP nano-solids
    • ZHANG Zhao-chun, ZOU Lu-jun, CUI De-liang. ESR defection of Ga self-interstitial defects in GaP nano-solids[J]. Mat Sci Eng B, 2004, B111(1): 5-8.
    • (2004) Mat Sci Eng B , vol.B111 , Issue.1 , pp. 5-8
    • Zhang, Z.-C.1    Zou, L.-J.2    Cui, D.-L.3
  • 5
    • 0010027529 scopus 로고
    • Energy bands and mobilities in monoatomic semiconductors
    • SHOCKLEY W, BARDEEN J. Energy bands and mobilities in monoatomic semiconductors[J]. Phys Rev, 1950, 77(3): 407-408.
    • (1950) Phys Rev , vol.77 , Issue.3 , pp. 407-408
    • Shockley, W.1    Bardeen, J.2
  • 6
    • 33750908389 scopus 로고    scopus 로고
    • Synthesis of diphenylene by means of catalytic properties of GaP nano-crystals
    • CUI De-liang, HAO Xiao-peng, YU Xiao-qiang, SHI Gui-xia, XU Xian-gang, JIANG Min-hua. Synthesis of diphenylene by means of catalytic properties of GaP nano-crystals[J]. Science in China B, 2001, 31(5): 451-455.
    • (2001) Science in China B , vol.31 , Issue.5 , pp. 451-455
    • Cui, D.-L.1    Hao, X.-P.2    Yu, X.-Q.3    Shi, G.-X.4    Xu, X.-G.5    Jiang, M.-H.6
  • 7
    • 0001042279 scopus 로고
    • Quantum confinement effects in semiconductor clusters
    • RAMA KRISHNA M V, FRIESNER R A. Quantum confinement effects in semiconductor clusters[J]. J Chem Phys, 1991, 95(11): 8309-8322.
    • (1991) J Chem Phys , vol.95 , Issue.11 , pp. 8309-8322
    • Rama, K.M.V.1    Friesner, R.A.2
  • 9
    • 23544459548 scopus 로고
    • Electronic structure, total energies, and abundances of the elementary point defects in GaAs
    • BARAFF G A, SCHLUTER M. Electronic structure, total energies, and abundances of the elementary point defects in GaAs[J]. Phys Rev Lett, 1985, 55(12): 1327-1330.
    • (1985) Phys Rev Lett , vol.55 , Issue.12 , pp. 1327-1330
    • Baraff, G.A.1    Schluter, M.2
  • 10
    • 0347714282 scopus 로고
    • Observation of the Ga self-interstitial defect in GaP
    • LEE K M. Observation of the Ga self-interstitial defect in GaP[J]. Mat Res Soc Proc, 1988, 104: 449-455.
    • (1988) Mat Res Soc Proc , vol.104 , pp. 449-455
    • Lee, K.M.1
  • 11
    • 0342821865 scopus 로고
    • Reflectivity and (dR/dE)/R of GaP between 2.5 and 6.0 eV
    • STOKOWSKI S E, SELL D D. Reflectivity and (dR/dE)/R of GaP between 2.5 and 6.0 eV[J]. Phys Rev B, 1972, 5(4): 1636-1639.
    • (1972) Phys Rev B , vol.5 , Issue.4 , pp. 1636-1639
    • Stokowski, S.E.1    Sell, D.D.2
  • 13
    • 0000921189 scopus 로고
    • Intrinsic optical absorption of gallium phosphide between 2.33 and 3.12 eV
    • DEAN P J, KAMINSKI G, ZETTERSTROM R B. Intrinsic optical absorption of gallium phosphide between 2.33 and 3.12 eV[J]. J Appl Phys, 1967, 38(9): 3551-3556.
    • (1967) J Appl Phys , vol.38 , Issue.9 , pp. 3551-3556
    • Dean, P.J.1    Kaminski, G.2    Zetterstrom, R.B.3
  • 14
    • 36049060197 scopus 로고
    • Electroreflectance at a semiconductor-electrolyte interface
    • CARDONA M, SHAKLEE K L, POLLAK F H. Electroreflectance at a semiconductor-electrolyte interface[J]. Phys Rev, 1967, 154(3): 696-720.
    • (1967) Phys Rev , vol.154 , Issue.3 , pp. 696-720
    • Cardona, M.1    Shaklee, K.L.2    Pollak, F.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.