Application of electron tomography for semiconductor device analysis

Microscopy and Microanalysis

Volumn 12, Issue SUPPL. 2, 2006, Pages 1552-1553

  Kübel, Christian ^a   Lee, Tan Chen ^b   Su, David ^b   Luo, Jian Shing ^c   Lo, Hui Min ^c   Russell, Jeremy ^c  

^a FRAUNHOFER INSTITUTE FOR MANUFACTURING TECHNOLOGY AND ADVANCED MATERIALS IFAM   (Germany)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c Inotera Memories   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33750868468     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927606065068     Document Type: Conference Paper

References (2)

1. C. Kübel, S. Kujawa, J.-S. Luo, H.-M. Lo, J. D. Russell 'Application of Electron Tomography for Semiconductor Device Analysis' in '8th International Workshop of Stress-Induced Phenomena in Metallization', edited by E. Zschech, AIP Conference Proceedings 817 (2006). American Institute of Physics, Melville, New York, in print.
2. C. Kübel, et al. 'Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and Semiconductor Applications', Microscopy and Microanalysis (2005) 11(5), p. 378-400.