Characterization of dynamic SOA of power MOSFETs limited by electrothermal breakdown

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 465-468

  Van Den Bosch, G ^a   Wojciechowski, D ^b   Elattari, B ^a   Moens, P ^b   Groeseneken, G ^a,c  

^a IMEC   (Belgium)

^b ON SEMICONDUCTOR   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC LINES; FAILURE ANALYSIS;

ELECTROTHERMAL BREAKDOWN; ELECTROTHERMAL COUPLING; ISO FAILURE TIME LINES; SAFE OPERATING AREA (SOA);

MOSFET DEVICES;

EID: 33750813921     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546685     Document Type: Conference Paper

References (7)

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6. Properties of Silicon, EMIS Datareviews Series No. 4, INSPEC, IEE, 1988, ISBN 0 85296 475 7
7. V. Khemka et al., IEEE Trans. Electron Devices, vol. 49, 2002, p. 1049