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Journal of Microscopy

Volumn 224, Issue 1, 2006, Pages 86-88

In situ electron beam induced current measurements of the local thickness in semiconductor devices

(4) Czerwinski, A a Pluska M a Ratajczak, J a Katcki, J a

a ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

Author keywords

In situ method; Quantitative electron beam induced current; Semiconductors; Thickness measurement

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; ELECTRONS; THICKNESS MEASUREMENT;

A: SEMICONDUCTORS; ELECTRON BEAM INDUCED CURRENT METHODS; ELECTRON-BEAM CURRENT; ELECTRON-BEAM-INDUCED CURRENT; FARADAY CUPS; IN-SITU METHODS; INDUCED CURRENT MEASUREMENTS; LAYER THICKNESS; MEASUREMENTS OF; QUANTITATIVE ELECTRON BEAM INDUCED CURRENT;

SEMICONDUCTOR DEVICES;

ARTICLE; DEVICE; ELECTRON BEAM; ELECTRON MICROSCOPE; MEASUREMENT; PRIORITY JOURNAL; QUANTITATIVE ANALYSIS; SEMICONDUCTOR; THICKNESS; VALIDATION PROCESS;

EID: 33750808389 PISSN: 00222720 EISSN: 13652818 Source Type: Journal
DOI: 10.1111/j.1365-2818.2006.01671.x Document Type: Article

Times cited : (2)

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