Iterative algorithm for determining depth profiles of collection probability by electron-beam-induced current

Semiconductor Science and Technology

Volumn 16, Issue 1, 2001, Pages 26-30

  Konovalov, Igor ^a,b   Breitenstein, Otwin ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b Institut fur Solartechnologien   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTATIONAL METHODS; ELECTRON BEAMS; INDUCED CURRENTS; ITERATIVE METHODS; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SOLAR CELLS;

DEPTH DOSE FUNCTION; ELECTRON BEAM INDUCED CURRENTS; ITERATIVE ALGORITHM; PENETRATION RANGE FUNCTION;

CARRIER MOBILITY;

EID: 0035120887     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/1/305     Document Type: Article

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