Temperature dependent impedance spectroscopy on polyaniline based devices

IEEE Transactions on Dielectrics and Electrical Insulation

Volumn 13, Issue 5, 2006, Pages 1074-1080

  Reis, F T ^a   Santos, L F ^a   Faria, R M ^a   Mencaraglia, D ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIV PARIS SUD   (France)

Author keywords

Capacitance measurement; Conducting polymers; Impedance spectroscopy; Interface phenomena; Polyaniline; Semiconductor metal interfaces

Indexed keywords

ALUMINUM; CAPACITANCE MEASUREMENT; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; GOLD; SPECTROSCOPY; THERMAL EFFECTS;

CONDUCTING POLYMERS; IMPEDANCE SPECTROSCOPY; INTERFACE PHENOMENA; POLYANILINE; SEMICONDUCTOR-METAL INTERFACES;

ORGANIC POLYMERS;

EID: 33750807745     PISSN: 10709878     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDEI.2006.247834     Document Type: Conference Paper

References (22)

1. M. Fahlman and W. R. Salanek, "Surfaces and interfaces in polymer-based electronics", Surf. Sci., Vol. 500, pp. 904-922, 2002.
2. W. S. Huang, B. D. Humphrey and A. G. MacDiarmid, "Polyaniline, a novel conducting polymer - morphology and chemistry of its oxidation and reduction in aqueous electrolytes", J. Chem. Soc. Farad. T., Vol. 82, p. 2385, 1986.
3. R. F. Bianchi, R. K. Onmori and R. M. Faria, "Device model for poly(o-methoxyaniline) field-effect transistor", J. Polym. Sci. Pol. Phys., Vol. 43, pp. 74-78, 2005.
4. G. Gustaffson, Y. Cao, G. M. Treacy, F. Klavetter, N. Colaneri and A. J. Heeger, "Flexible light-emitting diodes made from soluble conducting polymers", Nature, Vol. 357, pp. 477-479. 1992.
5. J. R. MacDonald, Impedance Spectroscopy, John Wiley and Sons, New York, 1987.
6. F.A. Castro, P.R. Bueno, C.F.O. Graeff, F. Nüesch, L. Zuppiroli, L.F. Santos and R.M. Faria, "Crossover from capacitive to pseudoinductive charge-relaxation in organic/polymeric light-emitting diodes", Appl. Phys. Lett., Vol. 87, pp. 013505(1-3), 2005.
7. H. C. F. Martens, H. B. Brom and P. W. M. Blom, "Frequency-dependent electrical response of holes in poly (p-phenylene vinylene)", Phys. Rev. B, Vol. 60, pp. R8489-R8492, 1999.
8. J. Scherbel, P. H. Nguyen, G Paasch, W. Brütting and M. Schwoerer, "Temperature dependent broadband impedance spectroscopy on poly-(p-phenylene-vinylene) light-emitting diodes", J. Appl. Phys., Vol. 83, pp. 5045-5055, 1998.
9. M. Meier, S. Karg and W. Riess, "Light-emitting diodes based on poly-p-phenylene-vinylene: II. Impedance spectroscopy", J. Appl. Phys., Vol. 82, pp. 1961-1966, 1997.
10. A. K. Jonscher, Dielectric Relaxation in Solids, Chelsea Dielectrics, London, 1983.
11. R. F. Bianchi, G. F. Leal Ferreira, C. M. Lepienski and R. M. Faria, "Alternating electrical conductivity of polyaniline", J. Chem. Phys., Vol. 110, pp. 4602-4607, 1999.
12. M. A. Lampert and P. Mark, Current Injection in Solids, Academic Press, New York, 1970.
13. P. Barta, Th. Kluger, W. R Salanek, A. P. Monkman, J. Libert, R. Lazzaroni and J. L. Brédas, "Electronic structure of emeraldine and pemigraniline base: A joint theoretical and experimental study", Synth. Met., Vol. 93, pp. 83-87, 1998.
14. R. F. Bianchi, H. N. Cunha, R. M. Faria, G. F. Leal Ferreira, J. Mariz and G. Neto, "Electrical studies on the doping dependence and electrode effect of metal-PANI-metal structures", J. Phys. D: Appl. Phys. , Vol. 38, pp. 1437-1443, 2005.
15. W. C. Chen and A. Gopalan, "Fabrication and characterization of Schottky junctions of aluminum with polyaniline containing hydrolysis products", J. Electrochem. Soc., Vol. 151, F242-F247, 2004.
16. H. Tsutsumi, "Synthesis of post-polymerizable polyaniline-p- styrenesulfonic acid composite and its application to Schottky diode", Synth. Met., Vol. 69, pp. 143-144, 1995.
17. J. D. Cohen and D.V. Lang, "Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states", Phys. Rev. B, Vol. 25, pp. 5321-5350, 1982.
18. T. Walter, R. Herberholz, C. Müller and H.W. Schock, "Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions", J. Appl. Phys., Vol. 80, pp. 4411-4420, 1996.
19. D. Mencaraglia, S. Ould Saad and Z. Djebbour, "Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases", Thin Solid Films, Vol. 431-432, pp. 135-142, 2003.
20. F. T. Reis, D. Mencaraglia, S. Ould Saad, I. Séguy, M. Oukachmih, P. Jolinat and P. Destruel, "Characterization of ITO/CuPc/AI and ITO/ZnPc/Al structures using optical and capacitance spectroscopy", Synth. Met., Vol. 138, pp. 33-37, 2003.
21. F. T. Reis, L. F. Santos, R. M. Faria, D. Mencaraglia and H. N. Cunha, "Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices", submitted for publication.
22. P. Viktorovitch and G. Moddel, "Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes", J. Appl. Phys., Vol. 51, pp. 4847-4854, 1980.