Double layer based electronic nanodevices fabricated on silicon nanoneedles

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Joshkin, V ^a   Lagally, M ^a   Van Der Weide, D ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE LAYER CAPACITORS; ELECTROCHEMICAL MODEL; NANODEVICES; SILICON NANONEEDLES;

ELECTROLYTES; ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PHOTODIODES; SCHOTTKY BARRIER DIODES; SILICON;

ELECTRONIC EQUIPMENT MANUFACTURE;

EID: 33750503264     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2356022     Document Type: Article

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