Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Adell, M ^a   Adell, J ^a   Ilver, L ^a   Kanski, J ^a   Sadowski, J ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SYNCHROTRONS;

VALENCE BAND OFFSET;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33750481500     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364182     Document Type: Article

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