Study of thermal strain relaxation in GaAs grown on Ge/Si substrates

Journal of Luminescence

Volumn 121, Issue 2 SPEC. ISS., 2006, Pages 375-378

  Colombo, D ^a   Grilli, E ^a   Guzzi, M ^a   Sanguinetti, S ^a   Fedorov, A ^b,c   von Kanel H ^b   Isella, G ^b  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

GaAs on Si; Photoluminescence; Strain relaxation

Indexed keywords

CRACK INITIATION; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; STRESS RELAXATION; THERMAL CYCLING;

ASYMPTOTIC CRACK DENSITY; EPILAYERS; STRAIN RELAXATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33750295983     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.08.027     Document Type: Article

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