Effective band gap of Si nanocrystals embedded in SiO 2 matrix

Journal of Nanoscience and Nanotechnology

Volumn 6, Issue 7, 2006, Pages 2037-2041

  Baskoutas, Sotirios ^a   Kapaklis, Vassilios ^a   Schommers, Wolfram ^b  

^a UNIVERSITY OF PATRAS   (Greece)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Effective Band Gap; Effective Mass Approximation; Excitons; Quantum Confinement; Si Nanocrystals

Indexed keywords

EFFECTIVE BAND GAP; EFFECTIVE MASS APPROXIMATION; QUANTUM CONFINEMENT; SI NANOCRYSTALS;

APPROXIMATION THEORY; BAND STRUCTURE; EXCITONS; MATRIX ALGEBRA; QUANTUM THEORY; SILICON;

NANOSTRUCTURED MATERIALS;

NANOMATERIAL; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; MODELS, MOLECULAR; NANOSTRUCTURES; NANOTECHNOLOGY; SEMICONDUCTORS; SILICON; SILICON DIOXIDE;

EID: 33750199311     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2006.333     Document Type: Article

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