Mechanism of low energy S+ ion bombarded p-GaAs (100)

Materials Letters

Volumn 60, Issue 25-26, 2006, Pages 3084-3087

  Zhao, Q ^a   Zhai, G J ^b   Kwok, R W M ^c  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b CENTER FOR SPACE SCIENCE AND APPLIED RESEARCH   (China)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

GaAs (100) surfaces; Ion implantation; Semiconductors; Sulfur passivation

Indexed keywords

GAAS (100) SURFACES; ION ENERGY; SULFUR PASSIVATION;

ANNEALING; CRYSTAL ORIENTATION; ION BOMBARDMENT; LOW ENERGY ELECTRON DIFFRACTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33750007292     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.02.047     Document Type: Article

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