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Electronics Letters

Volumn 42, Issue 21, 2006, Pages 1219-1221

Performance of RF MEMS switches at low temperatures

(8) Su, H T a Llamas Garro, I b Lancaster, M J c Prest, M c Park, J H d Kim, J M e Baek, C W f Kim, Y K e

a SWINBURNE UNIVERSITY OF TECHNOLOGY (Malaysia)

b INSTITUTO NACIONAL DE ASTROFÍSICA (Mexico)

c UNIVERSITY OF BIRMINGHAM (United Kingdom)

d LG Electronics Inc (South Korea)

e Seoul National University (South Korea)

f Chung Ang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATION VOLTAGE; LOW TEMPERATURES; METAL SWITCHES;

ACTUATORS; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; VOLTAGE CONTROL;

MICROELECTROMECHANICAL DEVICES;

EID: 33749988492 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20062551 Document Type: Article

Times cited : (15)

References (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.