Atomistic structural change of silicon surface under a nanoparticle collision

Chinese Science Bulletin

Volumn 50, Issue 15, 2005, Pages 1661-1665

  Duan, Fangli ^a,b   Luo, Jianbin ^a   Wen, Shizhu ^a   Wang, Jiaxiu ^b  

^a TSINGHUA UNIVERSITY   (China)

^b CHONGQING UNIVERSITY   (China)

Author keywords

Collision; Molecular dynamics simulation; Monocrystalline silicon surface; Nanoparticle

Indexed keywords

EID: 33749825151     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1360/982004-472     Document Type: Article

References (16)

1. Komanduri, R., Chandrasekaran, N., Raff, L. M., Molecular dynamics simulation of the nanometric cutting of silicon, Phil. Mag. B, 2001, 81(12): 1989-2019.
2. Inamura, T., Shimada, S., Takezawa, N. et al., Crack initiation in machining monocrystalline silicon, Ann. CIRR, 1999, 49: 81-84.
3. Zhang, L. C., Tanaka, H., Atomic scale deformation in silicon monocrystals induced by two-body and three-body contact sliding, Trib. Intern., 1998, 31, 8: 425-433.
4. Zarudi, I., Cheong, W. C. D., Zou, J. et al., Atomistic structure of monocrystalline silicon in surface nano-modification, Nanotechnol., 2004, 15: 104-107.
5. Cheong, W. C. D., Zhang, L. C., Molecular dynamics simulation of phase transformations in silicon monocrystals due to nano-indentation, Nanotechnol., 2000, 11: 173-180.
6. Sanz-Navarro, C. F., Kenny, S. D., Smith, R., Atomistic simulations of structural transformations of silicon surfaces under nanoindentation, Nanotechnol., 2004, 15: 692-697.
7. Que, D. L., Science and Technology of Silicon Material (in Chinese), Hangzhou: Publishing House of Zhejiang University, 2000.
8. Diaz de la Rubia, T., Gilmer, G. H., Structural transformations and defect production in ion implanted silicon, Phys. Rev. Lett., 1995, 74(13): 2507-2510.
9. Ihara, S., Itoh, S., Kitakami, J., Mechanisms of cluster implantation in silicon, Phys. Rev. B, 1998, 58(16): 10736-10744.
10. Biswas, R., Grest, G. S., Soukoulis, C. M., Molecular-dynamics simulation of cluster and atom deposition on silicon (111), Phys. Rev. B, 1988, 38(12): 8154-8162.
11. 20 cluster deposition on Si (001), Nucl. Instr. and Meth. in Phys. Res. B, 2003, 212: 281-285.
12. Takami, S., Suzuki, K., Kubo, M. et al., The fate of a cluster colliding onto a substrate, J. Nanopart. Res., 2001, 3: 213-218.
13. 20Si[111] surface bombardment, J. Chem. Phys., 1999, 111(16): 7583-7592.
14. Leach, A. R., Molecular Modelling: Principles and Applications, England: Longman, 1996.
15. Tersoff, J., Modeling solid-state chemistry: Interatomic potentials for multicomponent systems, Phys. Rev. B, 1989, 39(8): 5566-5568.
16. Duan, F. L., Luo, J. B., Wen, S. Z., Repulsion mechanism of nanoparticle colliding with monocrystalline silicon surface, Acta Phys. Sin. (in Chinese), 2005, 54(6): 2832-2837.