High efficiency class-F MMIC power amplifiers at Ku-band

2005 IEEE Annual Conference on Wireless and Microwave Technology, WAMICON 2005 - Conference Proceedings

Volumn 2005, Issue , 2005, Pages 137-140

  Ozalas, Matthew T ^a  

^a MITRE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POWER ADDED EFFICIENCY; PROCESS SELECTION;

HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NATURAL FREQUENCIES;

POWER AMPLIFIERS;

EID: 33749639890     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WAMIC.2005.1528402     Document Type: Conference Paper

References (11)

1. M. Cardullo, C. Page, D. Teeter, and A. Platzker, "High Efficiency X-Ku Band MMIC Power Amplifiers", 1996 IEEE MTT-S Digest, pp. 145-148.
2. D. Teeter, S. Bouthillette, L. Aucion, A. Platzker, C. Alfaro, and D. Bradford, "High Power, High Efficiency PHEMTs for use at 8 GHz", 1995 IEEE MTT-S Digest, pp. 323-326.
3. M.D. Weiss, F.H. Raab, and Z. Popovic, "Linearity of X-Band Class F Power Amplifiers in High-Efficiency Transmitters", IEEE Trans. on Microwave Theory and Techniques, Vol. 49, No. 6, June 2001, pp. 1174-1179.
4. A.N. D'Andrea, V. Lottici, and R. Reggiannini, "A Digital Approach to Efficient RF Power Amplifier Linearization", IEEE GLOBECOM, November, 1997, pp. 77-81.
5. TriQuint Semiconductor 0.25 um XKu pHEMT 3MI Process Data Sheet.
6. Cripps, S.C., RF Power Amplifiers for Wireless Communications, Artech House, Boston, 1999.
7. W. Kopp and S Pritchett, "High Efficiency Power Amplification for Microwave and Millimeter Frequencies", IEEE MTT-S, pp. 857-858, 1989.
8. Agilent Technologies Advanced Design System, Version 2003C.
9. C.F. Campbell, "Bias Dependence of 0.25 um pHEMT ' Parasitic Elements as Determined with a Direct Extraction Method", 2002 IEEE GaAs Digest, pp. 237-240.
10. Agilent Technologies Momentum Circuit Designer, Version 2003.
11. Stratedge Corporation 580383 Ceramic Package.