High power, high efficiency PHEMTs for use at 8 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1995, Pages 323-326

  Teeter, Doug ^a   Bouthillette, Steve ^a   Aucoin, Lisa ^a   Platzker, Aryeh ^a   Alfaro, Ciro ^a   Bradford, Dave ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GAIN MEASUREMENT; GATES (TRANSISTOR); PERFORMANCE; POWER ELECTRONICS; SEMICONDUCTOR MATERIALS; SUBSTRATES;

DEVICE SCALING; GATE PERIPHERY; GATE RECESSING; PHEMT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029228227     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/mwsym.1995.405978     Document Type: Conference Paper

References (6)