Mutagenesis of arabidopsis thaliana by N+ ion implantation

Plasma Science and Technology

Volumn 8, Issue 3, 2006, Pages 372-376

  Zhang, Genfa ^a   Shi, Xiaoming ^a   Nie, Yanli ^a   Jiang, Shan ^b   Zhou, Hongyu ^a   Lu, Ting ^a   Zhang, Jun ^c  

^a BEIJING NORMAL UNIVERSITY   (China)

^b CHINA INSTITUTE OF ATOMIC ENERGY   (China)

^c JOHNS HOPKINS UNIVERSITY SCHOOL OF MEDICINE   (United States)

Author keywords

rays; Arabidopsis thaliana; Genetic variation; Ion implantation; Nitrogen ion; RAPD

Indexed keywords

ARABIDOPSIS THALIANA; GENETIC VARIATION; NITROGEN ION;

DNA; DOSIMETRY; GAMMA RAYS; ION IMPLANTATION; MUTAGENESIS;

PLANTS (BOTANY);

EID: 33749533757     PISSN: 10090630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-0630/8/3/28     Document Type: Article

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