Low-frequency noise in SOI SiGe HBTs made by selective growth of the Si collector and non-selective growth of SiGe base

AIP Conference Proceedings

Volumn 780, Issue , 2005, Pages 265-268

  Lukyanchikova, N ^a   Garbar, N ^a   Smolanka, A ^a   Lokshin, M ^a   Hall, S ^b   Buiu, O ^b   Mitrovic, I Z ^b   Mubarek, H A W ^c   Ashburn, P ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

1 f noise; Bipolar transistors; GR noise; Polysilicon emitter; SiGe HBTs; SOI; Stress

Indexed keywords

EID: 33749474417     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2036746     Document Type: Conference Paper

References (4)

1. Hall, S., Lamb, A. C., Bain, M., Armstrong, B. M., Gamble, H., El Mubarek, H. A. W., Ashburn, P., Microelectronic Eng. 59, 449-454 (2001).
2. Lukyanchikova, N., Garbar, N., Petrichuk, M., Schiz, J. F.,W., Ashburn, P., IEEE Trans. Electron Devices, 48, 2808-2815 (2001).
3. Lukyanchikova, N. B., Noise Research in Semiconductor Physics, London; Gordon&Breach Sci. Publishers, 1996, chapter 5.3.3.
4. Markus, H. A. W., Roche, Ph., Kleinpenning, T. G. M., Solid-St. Electron. 41, 441-445 (1997).