The free exciton binding energy in a strained GaN0.02As 0.98 Layer

AIP Conference Proceedings

Volumn 772, Issue , 2005, Pages 291-292

  Kudrawiec, R ^a   Misiewicz, J ^a   Li, L H ^b   Harmand, J C ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749473553     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1994105     Document Type: Conference Paper

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