LO phonon-plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 455-460

  Tite, T ^a   Pages O ^a   Ajjoun, M ^a   Laurenti, J P ^a   Bormann, D ^b   Tournie E ^c   Maksimov, O ^d   Tamargo, M C ^d  

^a UNIVERSITY OF LIÈGE   (Belgium)

^b Lab de Phys Chim Interfaces Appl   (France)

^c CRHEA CNRS   (France)

^d CITY COLLEGE OF NEW YORK   (United States)

Author keywords

Disorder; GaAsN; Hard soft modes; LO phonon plasmon coupling; Raman spectroscopy

Indexed keywords

CRYSTALS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SOLUBILITY; TERNARY SYSTEMS;

PHONON-PLASMON COUPLINGS;

GALLIUM ALLOYS;

EID: 0037343623     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00388-X     Document Type: Conference Paper

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