Ballistic admittance: Periodic variation with frequency

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Dmitriev, A P ^a   Shur, M S ^b,c  

^a IOFFE INSTITUTE   (Russian Federation)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Research Rensselaer Polytechnic Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INVERSE ELECTRONS; PERIODIC VARIATION; SEMICONDUCTOR STRUCTURES;

ELECTRONS; FERMI LEVEL; OSCILLATIONS; PHASE TRANSITIONS;

SEMICONDUCTOR MATERIALS;

EID: 33749469817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357933     Document Type: Article

References (8)

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2. A. A. Kastalsky and M. S. Shur, Solid State Commun. 39, 715 (1981).
3. A. van der Ziel, M. S. Shur, K. Lee, T. H. Chen, and K. Amberiadis, IEEE Trans. Electron Devices 30, 128 (1983).
4. M. Dyakonov and M. S. Shur, in The Physics of Semiconductors, edited by, M. Scheffler, and, R. Zimmermann, (World Scientific, Singapore, 1996), 1, pp. 145-148.
5. M. S. Shur, IEEE Electron Device Lett. 23, 511 (2002).
6. M. Buttiker, J. Phys.: Condens. Matter 5, 93 (1993).
7. M. S. Shur, IEEE Trans. Electron Devices 28, 1120 (1981).
8. S. Rumyantsev, M. S. Shur, W. Knap, N. Dyakonova, F. Pascal, A. Hoffman, Y. Ghuel, C. Gaquiere, and D. Theron, Proc. SPIE 5470, 277 (2004).