Evolution of R.T.S source activities in saturation range in N-MOSFETs for different oxidation temperatures

AIP Conference Proceedings

Volumn 780, Issue , 2005, Pages 213-216

  Leyris, C ^a,b   Hoffmann, A ^a   Valenza, M ^a   Vildeuil, J C ^b   Roy, F ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Gate oxidation temperature; N MOSFETs; R.T.S fluctuations; Saturation range

Indexed keywords

EID: 33749465437     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2036734     Document Type: Conference Paper

References (4)

1. M.H.Tsai, T.P.MA and T.B.Hook, "Channel Length Dependence of Random Telegraph Signal in Sub-Micron MOSFETs ", IEEE Electron device letters, 15 no12, pp 504-506,1994
2. T.Boutchacha and G.Ghibaudo, «Electrical noise and RTS fluctuations in advanced CMOS devices», Microelectronics Reliability, 42, pp 573-582, 2002
3. C. Leyris, A. Hoffmann, M. Valenza, J-C. Vildeuil and F. Roy, "Trap competition inducing R.T.S. noise in saturation range in N-MOSFETs", 3th Conf. Fluctuations and Noise, Texas May 24-26 2005.
4. E.Simoen and C.Claeys, "On the flicker noise in submicron silicon MOSFETs", Solid State Electronics, 43, pp 865-882, 1999