Numerical approach for depth profiling with GE-XRF

X-Ray Spectrometry

Volumn 35, Issue 5, 2006, Pages 305-311

  Okhrimovskyy, Andriy ^a   Tsuji, Kouichi ^a,b  

^a Osaka Prefecture University   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILING; ION IMPLANTATION; LEAST SQUARES APPROXIMATIONS; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

ATOMIC PERCENTAGE; DEPTH-PROFILE; FLUORESCENCE INTENSITY PROFILE; GAUSSIANS; GRAZING EXIT; NUMERICAL APPROACHES; PARTICLES DISTRIBUTION; PEAK POSITION; SAMPLE SURFACE; X RAY FLUORESCENCE;

ATOMS;

EID: 33749419877     PISSN: 00498246     EISSN: 10974539     Source Type: Journal    
DOI: 10.1002/xrs.912     Document Type: Article

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