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Materials Letters

Volumn 60, Issue 28, 2006, Pages 3416-3419

Icicle growth of δ-Bi2O3 tips deposited on sapphire substrate by means of the carbothermal method

(4) Takeyama, T a Takahashi, N a Nakamura, T a Itoh, S b

a SHIZUOKA UNIVERSITY (Japan)

b ASAHI GLASS CO LTD (Japan)

Author keywords

Carbothermal method; Icicle growth; Sapphire substrate

Indexed keywords

CONTACT ANGLE; DEPOSITION; INTERFACIAL ENERGY; SAPPHIRE;

CARBOTHERMAL METHODS; ICICLE GROWTH; SAPPHIRE SUBSTRATE;

BISMUTH COMPOUNDS;

EID: 33749335581 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2006.03.025 Document Type: Article

Times cited : (3)

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