Influence of boron concentration on the XPS spectra of the (100) surface of homoepitaxial boron-doped diamond films

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 12, 2006, Pages 3147-3151

  Ghodbane, S ^a   Ballutaud, D ^b   Deneuville, A ^a   Baron, C ^a  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^b UNIVERSITÉ JOSEPH FOURIER GRENOBLE 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HOMOEPITAXIAL DIAMOND FILMS; POLYCRYSTALLINE FILMS; SURFACE DEFECTS;

CONCENTRATION (PROCESS); CRYSTAL DEFECTS; DIAMOND FILMS; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON;

EID: 33749333021     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200671123     Document Type: Conference Paper

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